Thecomplete annealing temperature of the defects for low fluence irradiated GaP was250K lower than that for high fluence irradiated GaP.
而高住量辐照样品中观察到比双空位更复杂的缺陷形式，其完全被退火的温度比低剂量辐照的高250k。
2
From the annealing characteristics of the different levels, we analyze their annealing kinetics, deduce their annealing mechanism, and make a reasonable identification of the nature of these defects.
It considers point, line and interfacial defects in the context of structural transformations including annealing, spinodal decomposition, nucleation, growth, and particle coarsening.