seed-layer

This plating method can be used for both direct plating onto the silicon or plating on a "seed layer" .

depositing a copper less seed layer on the diffusion barrier effective for electrochemical deposition of gap fill copper.

The seed layer is formed by a conformal deposition process and by a non conformal deposition process.

In one implementation, the inorganic seed layer 165 is a native oxide layer (such a native oxide typically has a thickness of 1 to 3 nm).

In another implementation, the inorganic layer is a deposited seed layer.

The orientation of PLZST thin films were controlled by the intermediate phase or seed layer.

The method further includes electroplating copper gapfill onto the seed layer.

forming a tungsten seed layer on the surface of the metal front dielectric layer inside the through hole;

forming using an electroless process a copper seed layer on the self-assembled monolayer having the catalytic particles adsorbed thereto;

Effects of the seed layer thicknesses on zero field resistivity and AMR in permalloy films with new seed layer NiFeNb

Anisotropy Magnetoresistance of Nanometer Permalloy Films with New Seed Layer NiFeNb

depositing a seed layer in the cavities and on the dielectric layer;

Zero field resistivity of nanometer permalloy films with new seed layer NiFeNb

detaching the carrier layer from the seed layer;

Influence of NiFeNb seed layer on hysteresis loops of permalloy films