Characteristic of ferroelectricstorage element has be en introduced in this paper. A few main preparation methods of information function thin film have been recommended. We present its use field.
本文介绍了铁电存储器的特性，提出了信息功能薄膜的几种主要的制备方法，指出了它的应用领域。
2
The improvements stem from using ferroelectric layers that no longer requires the use of a storage capacitor found in conventional DRAM cells.
这一改进使用了铁电层，从而不再需要使用传统DRAM单元中的存储电容。
3
Since multiferroic magnetoelectric (ME) material has ferroelectric, ferromagnetic and magnetoelectric properties, it is possible to use this material for the design of storage device.