C-Vcharacteristic data are shown by Numerical Calculations.
通过数值计算给出一些对了解C - V特性有用的数据。
2
The equipment mostly check up background currents, leakage-current, dynamic impedance and C-Vcharacteristic etc.
该设备主要检测晶片、芯片的背景电流、漏电流、动态阻抗和C-V特性等参数,使之满足探测器要求。
3
The simulation results show that the improved model can predict the polarization behavior of ferroelectric layer, the C-Vcharacteristic and memory window of MFIS capacitor more accurately.