The MOS model used includes short-channel effects, gate-source capacitance, gate-draincapacitance, and output resistance.
使用的MOS管模型考虑了短沟道效应、栅源电容、栅漏电容和输出电阻。
2
The DC equation and source draincapacitance formula of the models are given and the application range of three circuit simulation programs is analysed.
在给出多种模型DC方程和源漏电容公式的同时,对三种电路模拟程序的应用范围进行了分析。
3
The device used new "building blocks" mesa structure, which reduced gate-drain feedback capacitance.