In typical operation, the emitter-basejunction is forward biased and the base-collectorjunction is reverse biased.
在正常工作中,发射结正向偏置,基集电结反向偏置。
2
Regardless of type NPN or PNP-type tubes, the internal transistor has three areas, namely, the launch area, base, collector area, the three areas form two PN junction.
无论npn型还是PNP型管,三极管内部均有三个区、即发射区、基区、集电区,三个区形成两个PN结。
3
The base current and the junction leakage current increase, while the collector current and the breakdown voltage decrease for SiGe HBTs after radiation.