英语词汇collector base junction怎么读，是什么意思，单词翻译、读音、固定搭配用法和短语词组及例句-英汉双解词典

单词

collector base junction

释义

collector base junction

简明释义

集极基底连接；集电结

网络释义

1
?集电结
... collective 集体全体人员集体的集中的 collector base junction 集电结 collector bow 集电弓 ...
2
?集极基底连接
... 集极基底二极管 collector base diode 集极基底连接 collector base junction 集极束引线 collector beam lead ...
3
?集电极基极结
... 基极偏置电压 base bias voltage 集电极基极结 collector base junction 集电极基极电容 collector base capacitance; collector capacitance ...

短语

1
collector-base-junction integrated diode
集电极基极结集成二极管
2
collector-base-junction frequency multiplier
集电极基极结倍频器
3
base collector junction
基极集电极秸

双语例句

1
Regardless of type NPN or PNP-type tubes, the internal transistor has three areas, namely, the launch area, base, collector area, the three areas form two PN junction.
无论npn型还是PNP型管，三极管内部均有三个区、即发射区、基区、集电区，三个区形成两个PN结。
2
At constant bias current, the simulation shows significant enhancement in optical bandwidth due to moving the quantum well in the direction of collector-base junction.
模拟表明，在恒定的偏置电流下，沿集电结方向移动量子阱能显著提高光学带宽。
3
The base current and the junction leakage current increase, while the collector current and the breakdown voltage decrease for SiGe HBTs after radiation.
辐照后基极电流、结漏电流增大，集电极电流、击穿电压减小。

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单词	collector base junction
释义	collector base junction 简明释义集极基底连接；集电结网络释义 1 ?集电结 ... collective 集体全体人员集体的集中的 collector base junction 集电结 collector bow 集电弓 ... 2 ?集极基底连接 ... 集极基底二极管 collector base diode 集极基底连接 collector base junction 集极束引线 collector beam lead ... 3 ?集电极基极结 ... 基极偏置电压 base bias voltage 集电极基极结 collector base junction 集电极基极电容 collector base capacitance; collector capacitance ... 短语 1 collector-base-junction integrated diode 集电极基极结集成二极管 2 collector-base-junction frequency multiplier 集电极基极结倍频器 3 base collector junction 基极集电极秸双语例句 1 Regardless of type NPN or PNP-type tubes, the internal transistor has three areas, namely, the launch area, base, collector area, the three areas form two PN junction. 无论npn型还是PNP型管，三极管内部均有三个区、即发射区、基区、集电区，三个区形成两个PN结。 2 At constant bias current, the simulation shows significant enhancement in optical bandwidth due to moving the quantum well in the direction of collector-base junction. 模拟表明，在恒定的偏置电流下，沿集电结方向移动量子阱能显著提高光学带宽。 3 The base current and the junction leakage current increase, while the collector current and the breakdown voltage decrease for SiGe HBTs after radiation. 辐照后基极电流、结漏电流增大，集电极电流、击穿电压减小。
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