Three kinds of different new approaches to construct nanometer sized double barrier tunneling junctions for room temperature singleelectrontunneling studies were reported.
利用针尖修饰及纳米组装技术,采用三种不同的新方法构造出串联双隧穿结结构。
2
The generation mechanisms of these physical phenomena of Coulomb blockade, Coulomb staircase, singleelectrontunneling were described with singleelectron transistor(SET) as the research object.
以单电子晶体管为研究对象,系统阐述了库仑阻塞、库仑台阶、单电子隧穿等物理现象的产生机理。
3
Based on the orthodox theory, a model of a singleelectron transistor (SET) of metallic tunneling junctions is built using the master equation method.