This paper analyzes the failure mechanism of semiconductorP N junction temperature sensors and presents a new design to reduce the internal stresses and methods to improve the processes.
通过失效形式，分析了半导体P-N结温度传感器的失效机理，介绍了为降低内应力而进行的设计和工艺改进。
2
LED is the core of the P-type semiconductor and components of the N-type semiconductor chips.
发光二极管的核心部分是由P型半导体和N型半导体组成的晶片。
3
Amutual pulse injection-seeding scheme is developed to generate tunable dual-wavelength optical short pulses by the use of two gain-switched fabry-perot (F-P) semiconductor lasers.