SONOS flash memory has numerous advantages, such as excellent salability, high endurance, low power, radiation hardness, and is highly compatible with standard CMOS technologies.

In this paper, a 10k-gate radiation tolerant CMOS gate array has been developed to assess the intrinsic radiation hardness of circuits built at standard commercial CMOS foundries.

With taking advantage of the model of two-stage H+ process of interface trap formation and the role that F play in radiation hardness in gate-oxide . the above-mentioned result is deeply analyzed.