The effects of stoichiometric proportion and ambientgas on crystal SiC, especially on the defects of SiC, were analyzed.
分析了化学计量比和保护气体压力对SiC单晶生长及其缺陷形成的影响。
2
When a massive proto-star approaches the main sequence, its surface temperature is low and it can not ionize the ambientgas.
当一个大质量原星接近主星序时，它的表面温度是低的，因而不能电离周围的气体。
3
The model has been used to investigate the influence of different laser irradiance and ambientgas pressure on the laser ablation and the expansion of plume.