A high density recording medium with a super-resolution near-field structure including a mask layer comprising high melting point metaloxide or silicon oxide is provided.
提供一种包括包含高熔点金属氧化物或氧化硅的掩蔽层的具有超分辨率近场结构的高密度记录介质。
2
Most of the fabrication methods of silicon single-electron transistors can be perfectly compatible with the si complementary metal-oxide-semiconductor (CMOS) technology.
大多数硅基单电子晶体管的制备方法可以很好地与主流的CMOS工艺兼容。
3
The heart of its original embodiment was a metal-oxide-silicon sandwich , with initial letters responsible for the acronym MOS , as in MOSFET and MOS technology.