The method can avoid multicrystalsilicon residue between the sidewall of the dielectric layer and the dielectric layer, thereby preventing leakage current.
本方法避免在介电层的侧壁以及介电层之间产生多晶硅残留，防止漏电流发生。
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Project Contents: Multicrystalsilicon is produced from chloridized industrial silica fume through the extraction with physical and chemical method and under special conditions.