Based on simulation, the characteristics and mechanisms of failure on a deep sub-micron grounded-gate NMOS (GGNMOS) are studied under TLP (transmission linepulse) stress.
对TLP(传输线脉冲)应力下深亚微米ggnmos器件的特性和失效机理进行了仿真研究。
2
After the stop bit is received, the device will acknowledge the received byte by bringing the Data line low and generating one last clock pulse.
在收到停止位之后，设备将通过拉低数据线，生成最后一个时钟脉冲来应答收到的字节。
3
Electrical power pulse signal will be entered into angular displacement or displacement of the Central Line control components.