The body region was doped high to increase the back gatethresholdvoltage.
增加体区掺杂，以提高背栅阈值电压；
2
The thresholdvoltage of the transistor thus formed is controlled by the amount of charge that is retained on the floating gate.
如此形成的晶体管的阈值电压由保持在浮动栅极上的电荷量控制。
3
The analytical solutions to 1D Schrdinger equation (in depth direction) in double gate (DG) MOSFETs are derived to calculate electron density and thresholdvoltage.