Using this model, the parameters of HEMT such as channel conductance, transconductance, gatecapacitance, and cut-off frequency are derived.
由本文模型还推导出了HEMT沟道电导、跨导、栅电容和截止频率等微波参数表达式。
2
The processes of the bootstrapping from source and drain are analyzed in detail based on the capacitor model of MOSFET and it is pointed out that the gatecapacitance mainly plays a part of coupling.
The various applications and features are described of gate-source parasitic capacitance with synchronous rectifier diodes in the realization of actuating rectifier.