The plasma source ion implantation device consists of pulsed negative high voltage power, hotcathode arc discharge system, vacuum chamber and target stage, vacuum system and monitor system.
Direct current hotcathode plasma glow discharge chemical vapor deposition (DC-HCPCVD) is a new method to deposit high quality diamond films with high growth rate.
直流热阴极辉光放电等离子体化学气相沉积法是我们建立的快速沉积高品质金刚石膜的新方法。
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The relation between characteristics of hotcathode glow discharge and diamond film deposition techniques in hotcathode glow discharge plasma chemical vapor deposition process was discussed.