Substituting the electric field distributions into the formula we ve induced, we got the trapped charge distribution inside the buried oxide during total irradiation under different bias states.
通过对载流子扩散机理的研究，由数学公式的推导，得到陷阱电荷分布随电场变化的函数关系。
2
For passive working electric field sensors, the effects of bias point on the performances including sensitivity and linear dynamic range are analyzed.
针对光波导电场传感器无源工作的特点，分析了电场传感器工作点对传感灵敏度、线性动态范围的影响。
3
A high reverse bias voltage creates a strong internal electric field, which accelerates the electrons through the silicon crystal lattice and produces secondary electrons by impact ionization.