During an ESD event, both D1 and D2 can conduct, but the voltage at VIN exceeds the power-supply-rail voltage by only two forward-biased diode voltage drops.
The development of the test instrument for forward-biased second breakdown for characteristics of power transistors (GIR) is described and main parameters are given.
本文对功率晶体管(GTR)正偏二次击穿测试仪的研制进行了说明，并给出了主要技术参数。
3
The MOSFET input diode is controlled by an electric field in the gate region, thus the input impedance is always extremely high because there is no forwardbiased diode to lower the input impedance.