| 单词 | 漏极 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 释义 | 漏极 noun —drain nSee also:漏—divulge • waterclock or hourglass (old) • leave out by mistake
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由于场效应晶体管 (FET) 是耗尽型器件，它们都必须 通过施加到门极的负电压获得相对于 漏极 ／ 源 极 电 压的 偏置。 skyworksinc.com | Since the GaAs pHEMT Field-Effect Transistors [...] (FETs) are depletion mode [...] devices, they must be biased with a negative voltage at the gate with respect to the voltage at the drain/source. skyworksinc.com |
来自 Panasonic 的功率 CSP MOSFET 系列采用功率安装 CSP 封装（PMCP），集成了独特焊盘设计和 漏极 夹 技 术。 digikey.cn | The Power CSP MOSFET Series from Panasonic features Power Mount CSP Packaging (PMCP) that is comprised of a unique pad design and drain clip technology. digikey.be |
根据不同的门极电压，漏极和源极之间的通道处于低阻 或高阻状态。 skyworksinc.com | The channel between the drain and source can be either a low resistance or a high resistance based on the voltage on the gate. skyworksinc.com |
通过应用两个电极之间的横向电场，从而对处于源头 到 漏极 之 间 的电流通路处的阻抗进行调制的晶体管。 spellmanhv.cn | Transistor in which the resistance of the current path from source to drain is modulated by applying a transverse [...] electric field between two electrodes. spellmanhv.com |
这些传感器利用了 CMOS 技术，包括一个霍尔板、有源稳定电路、比较仪和一 个 漏极 开 路 输出。 cn.hamlin.com | These sensors utilize CMOS technology and consist of a Hall plate, active stabilization circuitry, a comparator, and an open-drain output. hamlin.com |
FD-SOI 技术无需体效应晶体管的管体与源 漏极 之 间 的寄生二极管，所以，FD-SOI 准 许施加电压范围更宽的偏压。 stericsson.com | Compared to bulk, FD-SOI enables the application of a wider range of biasing thanks to the elimination of the parasitic diodes between the body and the source and drain present in bulk technology. stericsson.com |
在 漏极偏置 条件下，位于栅极边缘的高电场 可能会增加应力(反向压电效应)，从而影 [...] 响器件的可靠性。 epc-co.com | High electric fields at the gate [...] edge under drain bias can increase [...]the strain (inverse piezoelectric effect) and therefore affect device reliability. epc-co.com |
与EPC1010器件一 [...] 样，40V(EPC1014和EPC1015)晶体管于 超过1000小时应力测试也没有观察到任 何漏极至源极漏电流劣化现象。 epc-co.com | As with EPC1010, no drain-source leakage degradation was observed [...] over a 1000 hours stress period for the 40 V (EPC1014 and EPC1015) transistors. epc-co.com |
此击穿电流在输出方式为CMOS类型的产品比较大，在 N沟道开路漏极产品中也会稍许流经。 datasheet.sii-ic.com | The through-type current is large in CMOS output products, small in Nch open-drain output products. datasheet.sii-ic.com |
在S-1000系列产品中，在没有所希望的检测电压范围的方案的情况下、仅限于N沟道开 路 漏极 产 品如图29、30所示， 可以利用分割电阻或者二极管来改变检测电压。 datasheet.sii-ic.com | In Nch open-drain output products of the [...] S-1000 series, detection voltage can [...]be changed using resistance dividers or diodes as shown in Figures 29 to 30. datasheet.sii-ic.com |
虽然栅极偏置电压高于6V时的 晶体管测试同样表明具有稳定的栅 极漏电 流，但漏极至源极漏电流 开始有所增加。 epc-co.com | Transistors subjected to a gate bias greater than 6 V showed [...] stable gate leakage, but began to show increase in the drain-to-source leakage. epc-co.com |
对于功率晶体管来说关键的可靠性考虑因 素包括：(a)当栅极上施加电压使晶体管 得到完全增强时，于导通状态时的器件稳 定性；(b)当晶体管处于电压阻塞模式， 并承受最大至额定漏极至源 极电压时，于 关断状态时的器件稳定性；(c)开关工作 时的器件稳定性。 epc-co.com | The key reliability considerations for power transistors include: (a) device stability in the on-state when the transistor is fully enhanced with voltage applied on the gate; (b) device stability in the off-state when the transistor is in voltage blocking mode withstanding up to its rated drain-source voltage; and (c) device stability in switching operation. epc-co.com |
在应力室内有50个EPC1010器件，它 们的漏极施加了200V的偏置电压，栅极 和源极被接地短路。 epc-co.com | Fifty EPC1010 devices were drain biased at 200 V in the stress chamber with gate and source shorted to ground. epc-co.com |
GaN拥有比 硅高得多的关键电场，因此这种新器件 的漏极至源极之间可以承受高得多的电 压，而对导通电阻的负面影响却很小。 epc-co.com | GaN also has a much higher critical electric field than silicon which enables this new class of devices to withstand much greater voltage from drain to source with much less penalty in onresistance. epc-co.com |
开关场效应晶体管 (FET) 充当三端口器件时，源极和漏极 形成射频信号的通道，门极控制通道的打开和关断。 skyworksinc.com | A switching field effect transistor (FET) functions as a three port device, where the source and drain ports form a conduction path or channel for the RF signal and the gate port controls whether the channel is opened or closed. skyworksinc.com |
我们把50个 EPC1010晶体管被置于温度为85℃、漏极 至源极偏置电压为100V、相对湿度为85% 的温湿箱内做了应力测试(其中25个有底 部填充)。 epc-co.com | Fifty EPC1010 transistors were subjected to a drain-source bias of 100 V at 85˚C in a humidity chamber with 85% relative humidity (twenty five out of the fifty parts were underfilled). epc-co.com |
从图中可以看到被测试器件在经过 1000小时的栅极应力测试、漏极至源 极应力测试和暴露在高湿环境且有偏置 条件下的稳定性。 epc-co.com | As can be seen, tested devices are stable after 1000 hour stresses of the gate, the drain-source, and when exposed to high humidity with bias. epc-co.com |
这种器件具有100V的漏极-源极击 穿电压和0.1Ω的导通电阻，树立了那个 时代的基准。 epc-co.com | It boasted a 100V drainsource breakdown voltage and a 0.1 W on-resistance; the benchmark of the era. epc-co.com |
时的重要参数，请参照阈值电压、门极与源极之间的击穿电压 、 漏极 与 源 极之间 的击穿电压、总门极容量、通态电阻和电流额定值。 datasheet.sii-ic.com | The important parameters in selecting a MOS FET are threshold voltage, breakdown voltage between drain and source, total gate capacitance, on-resistance, and the current rating. datasheet.sii-ic.com |
CHGLED 是 NMOS Open Drain(漏极开路 型)输出，可以通过一个限流电阻来直接驱动一 个发光二极管来显示这四种状态。 dl.linux-sunxi.org | CHGLED is NMOS Open Drain output, so a LED can be directly driven by a current-limit resistor to show the four states. dl.linux-sunxi.org |
与 EPC1010一样，在对100V(EPC1001)和 40V(EPC1014)晶体管施加最大额定漏极 至源极偏置电压时的HTRB应力测试过程 中也没有观察到栅极漏电流劣化现象。 epc-co.com | As with EPC1010, no gate leakage degradation was observed over the stress period for the 100V (EPC1001) and 40V (EPC1014) [...] transistors in the HTRB [...]tests with the max rated drain-source bias applied. epc-co.com |
功耗更低：有多个因素促使功耗降低：全耗尽沟道消除 了 漏极 引 起的寄生效应，在低 功耗模式，可更好地限制载流子从源 极 流 向 漏极 ； 更 厚的栅电介质层可降低 栅 极 泄漏 电流；更好地控制体偏压技术 (为更好地控制速度和功耗而向晶体管体施加的电压)。 stericsson.com | Cooler: several factors contribute to lower power consumption: the fully depleted channel removing drain-induced parasitic [...] effects and lower power operation, better [...] confinement of carriers from source to drain, thicker gate dielectric reducing gate leakage current, and better control of body biasing techniques (voltage applied to transistor [...] [...]body to better control speed and power consumption). stericsson.com |
N 沟道开路漏 极输出 产品，推荐输入电阻在 800 Ω或 800 Ω以下，但请在实际应用了本 IC 的电路上，对包括温度的特性进行实测验 证。 datasheet.sii-ic.com | In Nch open drain output products, input impedance is recommended to be 800 Ω or less. However be sure to perform sufficient evaluation under the actual usage conditions for selection, including evaluation of temperature characteristics. datasheet.sii-ic.com |
有两个关键 [...] 领域需要特别加以关注：较低的栅极电 介强度(及在有限栅极漏电流于每毫米 栅极宽度毫安数量级)和较高的频率响 应。 epc-co.com | Two key areas stand out as requiring special attention: [...] relatively low gate dielectric [...] strength (and finite gate leakage on the order of micro [...]Amperes per millimeter of gate width) [...]and relatively high frequency response. epc-co.com |
与栅极电压为5V的栅极应力测试一 样，在整个3000小时的应力周期内，栅 极漏电流一直保持稳定。 epc-co.com | The gate leakage was measured with [...] 5 V on the gate with drain and source shorted to ground at 25˚C. epc-co.com |
由於該病毒是具潛在危險的病原體，因此化驗室如出現 [...] 人類豬型甲型流行性感冒(H1亞型)病毒 逸 漏 事 故 ，必須受法定呈 報規定所管制，以便及早偵察有關事故，並及時採取適當的控制 [...] 措施，以保障化驗室人員的健康和防止疾病蔓延。 legco.gov.hk | As the virus is a potentially dangerous pathogen, it is important for incidents of leakage of human swine influenza A virus (subtype H1) from laboratories to be subject to the [...] statutory notification requirement, so as to [...] facilitate early detection of such incidents, [...]and to enable appropriate control measures [...]to be implemented in a timely manner for the protection of laboratory workers and prevention of spread of diseases. legco.gov.hk |
本 公 佈（ 中 國基建 港 口 有 限 公 司（「 本 公 司 」）董 事（「 董 事 」）願 共 同 及 個 別 對 此 負 全 責 ）乃 遵 照 香 港 聯 合 交 易 所 有 限 公 司 創 業 板 證 券 上 市 規 則（「 創 業 板 上 市 規 則 」）之 規 定 而 提 供 有 關 本 公 司 之 資 料 。 經 作 出 一 切 合 理 查 詢 後 確 認 ， 就 彼 等 所 深 知 及 確 信 ： (i) 本 公 佈 所 載 資 料 在 各 重 大 方 面 均 屬 準 確 及 完 整 ， 且 無 誤 導 成 分 ； (ii) 本 公 佈 並 無 遺 漏 任 何 其 他事宜 致 使 當 中 所 載 任 何 聲 明 有 所 誤 導 ； 及 (iii) 本 公 佈 內 表 達 之一切 意 見 乃 經 審 慎 周 詳 考 慮 方 始 作 出 ， 並以公 平 合 理 之 基 準 和 假 設 為 依 據 。 cigyangtzeports.com | This report, for which the directors (the “Directors”) of CIG Yangtze Ports PLC (the “Company”) collectively and individually accept full responsibility, includes particulars given in compliance with the Rules Governing the Listing of Securities on GEM of the Stock Exchange of the Hong Kong Limited (the “GEM Listing Rules”) for the purpose of giving information with regard to the Company, having made all reasonable enquiries, confirm that, to the best of their knowledge and belief: (i) the information contained in this report is accurate and complete in all material respects and not misleading; (ii) there are no other matters the omission of which would make any statement in this report misleading; and (iii) all opinions expressed in this report have been arrived at after due and careful consideration and are founded on bases and assumptions that are fair and reasonable. cigyangtzeports.com |
董事共同及個別 對本通函所載資料的準確性承擔全部責任，並在作出一切合理查詢後確認，就彼等所知及 所信，本通函所載意見乃經審慎週詳考慮後始行作出，且本通函概無 遺 漏 任 何 其他事實致 令本通函所載任何聲明產生誤導。 equitynet.com.hk | The Directors jointly and individually accept full responsibility for the accuracy of the information contained in this circular and confirm, having made all reasonable enquiries, that to the best of their knowledge and belief, opinions expressed in this circular have been arrived at after due and careful consideration and there are no other facts the omission of which would make any statement in this circular misleading. equitynet.com.hk |
本 公 司 董 事 經 作 出 一 切 合 理 查 詢 後 確 認 ， 就 彼 等 所 深 知 及 確 信 ： (i) 本 公 佈 所 載 資 料 在 各 重 大 方 面 均 屬 準 確 及 完 整 ， 且 無 誤 導 成 分 ； (ii) 本 公 佈 並 無 遺 漏 任 何 其 他事宜 致 使 當 中 所 載 任 何 聲 明 有 所 誤 導 ； 及 (iii) 本 公 佈 內 表 達 之一切 意 見 乃 經 審 慎 周 詳 考 慮 方 始 作 出 ， 並以公 平 合 理 之 基 準 和 假 設 為 依 據 。 cigyangtzeports.com | The Directors of the Company, having made all reasonable enquiries, confirm that, to the best of their knowledge and belief: (i) the information contained in this announcement is accurate and complete in all material respects and not misleading; (ii) there are no other matters the omission of which would make any statement in this announcement misleading; and (iii) all opinions expressed in this announcement have been arrived at after due and careful consideration and are founded on bases and assumptions that are fair and reasonable. cigyangtzeports.com |
在访问期间，工作组发现，非洲人后裔在葡萄牙面临的挑战主要涉及他们 [...] 作为一个特定群体在葡萄牙国家政策和立法框架中得不到承认；其在历史上对 该国的建设和发展作出积极贡献 得不到承认；没有按种族或族裔分列的定性和 [...]定量的分类数据；贫困、获得教育、公共服务和就业机会不平等，以及在行政 和司法制度运作方面的歧视，形成恶性循环；存在种族貌相和警察暴力；在政 [...] 治和体制决策进程中代表不足，以及葡萄牙缺少针对非洲人后裔或其他少数群 体的具体措施或扶持行动政策。 daccess-ods.un.org | During their visit, the Working Group found that the challenges faced by people of African descent in Portugal related mainly to their lack of recognition as a specific group in the national [...] policy and legal framework; the lack of [...] recognition of their positive contribution throughout [...]history to the construction and [...]development of the country; the lack of qualitative and quantitative disaggregated data by racial or ethnic origin; the existence of a circle of poverty, unequal access to education, public services, employment, as well as discrimination in the administration and functioning of the justice system; existence of racial profiling and police violence; underrepresentation in political and institutional decision-making processes, as well as the lack of special measures or affirmative action policies in Portugal for people of African descent or other minorities. daccess-ods.un.org |
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