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External sources (not reviewed)

EPC recognizes this weakness and is working toward improving the gate maximum voltage rating.

EPC’s eGaN transistors do not use a Schottky gate and therefore are not vulnerable to this last mechanism.

Utilizing an advanced charge balance technology, these MOSFETs provide significantly low on-resistance and lower gate charge (Qg) performance for a lower figure of merit (FOM).

Transistors subjected to a gate bias greater than 6 V showed stable gate leakage, but began to show increase [...]

The crystallographic defects and strain relaxation also lower the electron density in the region next to gate, thereby reducing the current carrying capability10 .

These devices employ proprietary epi material and quarter micron recessed gate process technology, which result in highly linear (+48 dBm IP3 in a 1 W P-1 dB Wireless Amp) and low phase noise (-125 dBc @ 100 KHz Offset in a 17.5 GHz DRO) devices with power outputs ranging from 10 milliwatts to 5 watts.

The key reliability considerations for power transistors include: (a) device stability in the on-state when the transistor is fully enhanced with voltage applied on the gate; (b) device stability in the off-state when the transistor is in voltage blocking mode withstanding up to its rated drain-source voltage; and (c) device stability in switching operation.

Our products include transformers for audio, gate drive, power, medical/dental, wall-mount and plug-in applications; as well as inductors for current sense, common mode, toroidal, filtering and power applications.

They integrate a dual full-bridge gate driver for N-channel MOSFET power stages with embedded non-dissipative overcurrent protection.

Fairchild Semiconductor's high power industrial applications such as solar inverters, uninterruptible power supplies (UPS), and motor drives demand a gate driver optocoupler capable of handling networks greater than 690 VAC and constant DC voltages greater than 1000 VDC.

As can be seen, tested devices are stable after 1000 hour stresses of the gate, the drain-source, and when exposed to high humidity with bias.

In comparison to gate drivers employing high voltage level translation methodologies, the ADuM3220 offers the benefit of true, galvanic isolation between the input and each output, enabling voltage translation across the isolation barrier.

The device consists of an integrated gate drive optocoupler featuring low RDS(ON) CMOS transistors to drive the IGBT from rail-to-rail.

The devices are comprised of several integrated features to assist in a simplified design which reduces component count for a more efficient, cost-effective design including a gate resistor (Rg) that greatly reduces gate oscillation and improves overall system performance.

[...] [...] conduction occurs, a positive voltage is applied [...]

In addition, class D audio application-critical parameters such as Internal Gate Resistance, RG(int), has a guaranteed maximum value for improved dead-time control.