1. The peaks of localized energy states were separated from the detrapping current curves by means of poling temperature scanning method.
   通过热释电极化温度扫描法分离出对解俘获电流峰贡献的各局域能级峰。
2. Also, High electric field annealing of stressed PMOSFET and detrapping of trapped electrons on the gate oxide are studied deeply.
   重点研究了退化PMOS器件的高场退火效应和氧化层陷阱电子的退陷阱机制。

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