Carrier scattering

（重定向自Defect scattering）

Figure 1: Harrison energy diagram of electron energies at different stages of forming a Si crystal. Vertical axis is energy. The 3s and 3p orbitals hybridize on a single Si atom which is energetically unfavorable because the 2 3s electrons gain more energy than the 2 3p electrons lose. Favorable dimer formation forms bonding (b) and anti-bonding (b*) states finally resulting in net energy loss and subsequent atom addition builds the crystal forming conduction (CB) and valence bands (VB). Dangling bond states (db) are equivalent to a missing sp3 bond.

Figure 2: Harrison electron energy diagram for III-IV compound semiconductor GaAs. Same as for Si, the crystal is built with the addition of hybridized GaAs dimers. As vacancies cause Ga dangling bonds forming states near the CB. Ga vacancies produce As dangling bonds having energies near the VB. The VB is made primarily of

Figure 3: (Top) Simple source-drain voltage sweeps with increasing defect density can be used to extract a carrier scattering rate and dangling bond energy (red curve having more defects). (Bottom) Temperature dependence of resistivity. Near absolute zero, the weight of defects on carrier scattering is revealed.

Figure 4: Hydrogen passivation of a Si metal-oxide-semiconductor field-effect transistor (MOSFET) for reduction of Si/SiO2 interface states. Hydrogen bonds to Si fully satisfying sp3 hybridization providing defect state occupancy preventing carrier scattering into these states.

Defect types include atom vacancies, adatoms, steps, and kinks which occur most frequently at surfaces due to finite material size causing crystal discontinuity. What all types of defects have in common, whether they be surface or bulk, is that they produce dangling bonds which have specific electron energy levels not similar to those of the bulk. This is because these states cannot be described with periodic Bloch waves due to the change in electron potential energy caused by the missing ion cores just outside the surface. Hence, these are localized states which one must solve the Schrödinger equation for separately such that electron energies can be properly described. The break in periodicity results in a decrease in conductivity due to defect scattering.

单词	Defect scattering
释义	Defect scattering 英语百科 Carrier scattering （重定向自Defect scattering） Defect types include atom vacancies, adatoms, steps, and kinks which occur most frequently at surfaces due to finite material size causing crystal discontinuity. What all types of defects have in common, whether they be surface or bulk, is that they produce dangling bonds which have specific electron energy levels not similar to those of the bulk. This is because these states cannot be described with periodic Bloch waves due to the change in electron potential energy caused by the missing ion cores just outside the surface. Hence, these are localized states which one must solve the Schrödinger equation for separately such that electron energies can be properly described. The break in periodicity results in a decrease in conductivity due to defect scattering.
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