Coulomb blockade

Schematic representation (similar to band diagram) of an electron tunnelling through a barrier

Schematic of a single-electron transistor.

Left to right: energy levels of source, island and drain in a single-electron transistor for the blocking state (upper part) and transmitting state (lower part).

Single-electron transistor with niobium leads and aluminium island.

In physics, a Coulomb blockade (CB), named after Charles-Augustin de Coulomb's electrical force, is the increased resistance at small bias voltages of an electronic device comprising at least one low-capacitance tunnel junction. Because of the CB, the resistances of devices are not constant at low bias voltages, but increase to infinity for biases under a certain threshold (i.e. no current flows). When few electrons are involved and an external static magnetic field is applied, Coulomb blockade provides the ground for spin blockade (also called Pauli blockade) and valley blockade which includes quantum mechanical effects due to spin and orbital interactions respectively between the electrons.

单词	Coulomb staircase
释义	Coulomb staircase 英语百科 Coulomb blockade In physics, a Coulomb blockade (CB), named after Charles-Augustin de Coulomb's electrical force, is the increased resistance at small bias voltages of an electronic device comprising at least one low-capacitance tunnel junction. Because of the CB, the resistances of devices are not constant at low bias voltages, but increase to infinity for biases under a certain threshold (i.e. no current flows). When few electrons are involved and an external static magnetic field is applied, Coulomb blockade provides the ground for spin blockade (also called Pauli blockade) and valley blockade which includes quantum mechanical effects due to spin and orbital interactions respectively between the electrons.
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Coulomb staircase

Coulomb blockade