Note that the oxide layer under the photoresist is protected.

请注意，光刻胶下方的氧化层受到保护。

The process essentially starts again, first by building up a fresh oxide layer ...which we coat in photoresist.

这个过程基本上又开始了，首先是建立一个新的氧化层… … 我们在上面涂上光刻胶。

The final step is to make channels in the oxide layer so that we can run little metal wires to different parts of our transistor.

最后一步是在氧化层中制作通道，这样我们就可以将小金属线连接到晶体管的不同部分。

But where the light does hit the photoresist it changes chemically which lets us wash away only the photoresist that was exposed to light, selectively revealing areas of our oxide layer.

但是，在光线确实照射到光刻胶的地方，它会发生化学变化，这让我们只能洗掉暴露在光线下的光刻胶，有选择地露出氧化层的区域。