Magnetoresistance

Corbino disc. With the magnetic field turned off, a radial current flows in the conducting annulus due to the battery connected between the (infinite) conductivity rims. When a magnetic field along the axis is turned on, the Lorentz force drives a circular component of current, and the resistance between the inner and outer rims goes up. This increase in resistance due to the magnetic field is called magnetoresistance.

The resistance of a thin Permalloy film is shown here as a function of the angle of an applied external field.

Magnetoresistance is the property of a material to change the value of its electrical resistance when an external magnetic field is applied to it. There is a variety of effects that can be called magnetoresistance, some of them occurring in bulk non-magnetic metals and semiconductors (e.g. geometrical magnetoresistance, Shubnikov de Haas oscillations or the common positive magnetoresistance in metals), others in magnetic metals (e.g. negative magnetoresistance in ferromagnets or AMR) and since 1980's magnetoresistive effects in multicomponent or multilayer systems (e.g. magnetic tunnel junctions) gained importance (GMR, TMR, EMR). The first magnetoresistive effect was discovered by William Thomson (better known as Lord Kelvin) in 1851, but he was unable to lower the electrical resistance of anything by more than 5%. Nowadays, systems are known (e.g. semimetals or concentric ring EMR structures) where magnetic field can change resistance by orders of magnitude. As the resistance may depend on magnetic field through various mechanisms, it is useful to separately consider situations where it depends on magnetic field directly (e.g. geometric magnetoresistance, multiband magnetoresistance) and those where it does so indirectly through magnetisation (e.g. AMR, TMR).

单词	Magnetoresistive
释义	Magnetoresistive 英语百科 Magnetoresistance Magnetoresistance is the property of a material to change the value of its electrical resistance when an external magnetic field is applied to it. There is a variety of effects that can be called magnetoresistance, some of them occurring in bulk non-magnetic metals and semiconductors (e.g. geometrical magnetoresistance, Shubnikov de Haas oscillations or the common positive magnetoresistance in metals), others in magnetic metals (e.g. negative magnetoresistance in ferromagnets or AMR) and since 1980's magnetoresistive effects in multicomponent or multilayer systems (e.g. magnetic tunnel junctions) gained importance (GMR, TMR, EMR). The first magnetoresistive effect was discovered by William Thomson (better known as Lord Kelvin) in 1851, but he was unable to lower the electrical resistance of anything by more than 5%. Nowadays, systems are known (e.g. semimetals or concentric ring EMR structures) where magnetic field can change resistance by orders of magnitude. As the resistance may depend on magnetic field through various mechanisms, it is useful to separately consider situations where it depends on magnetic field directly (e.g. geometric magnetoresistance, multiband magnetoresistance) and those where it does so indirectly through magnetisation (e.g. AMR, TMR).
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Magnetoresistive

Magnetoresistance