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单词 Insulated Gate Bipolar Transistor
释义

Insulated Gate Bipolar Transistor

中文百科

绝缘栅双极晶体管 Insulated-gate bipolar transistor

(重定向自Insulated Gate Bipolar Transistor)
三菱制大功率IGBT模块
Sección de un IGBT.
Circuito equivalentede un IGBT.

绝缘闸双极晶体管英语:Insulated Gate Bipolar Transistor, IGBT),是半导体器件的一种,主要用于电动车辆、铁路机车及动车组的交流电电动机的输出控制。传统的BJT导通电阻小,但是驱动电流大,而MOSFET的导通电阻大,却有着驱动电流小的优点。IGBT正是结合了这两者的优点:不仅驱动电流小,导通电阻也很低。

英语百科

Insulated-gate bipolar transistor 绝缘栅双极晶体管

(重定向自Insulated Gate Bipolar Transistor)
Static characteristic of an IGBT
Cross section of a typical IGBT showing internal connection of MOSFET and Bipolar Device
IGBT-Module (IGBTs and freewheeling diodes) with a rated current of 1,200 A and a maximum voltage of 3,300 V
Opened IGBT module with four IGBTs (half of H-bridge) rated for 400 A 600 V

An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device primarily used as an electronic switch which, as it was developed, came to combine high efficiency and fast switching. It switches electric power in many modern appliances: variable-frequency drives (VFDs), electric cars, trains, variable speed refrigerators, lamp ballasts, air-conditioners and even stereo systems with switching amplifiers. Since it is designed to turn on and off rapidly, amplifiers that use it often synthesize complex waveforms with pulse-width modulation and low-pass filters. In switching applications modern devices feature pulse repetition rates well into the ultrasonic range—frequencies which are at least ten times the highest audio frequency handled by the device when used as an analog audio amplifier.

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