Electron-beam lithography

An example of 'Electron beam lithograph' setup

Field stitching. Stitching is a concern for critical features crossing a field boundary (red dotted line).

Electron trajectories in resist: An incident electron (red) produces secondary electrons (blue). Sometimes, the incident electron may itself be backscattered as shown here and leave the surface of the resist (amber).

Scanning probe lithography. A scanning probe can be used for low-energy electron beam lithography, offering sub-100 nm resolution, determined by the dose of low-energy electrons.

Electron-beam lithography (often abbreviated as e-beam lithography) is the practice of scanning a focused beam of electrons to draw custom shapes on a surface covered with an electron-sensitive film called a resist ("exposing"). The electron beam changes the solubility of the resist, enabling selective removal of either the exposed or non-exposed regions of the resist by immersing it in a solvent ("developing"). The purpose, as with photolithography, is to create very small structures in the resist that can subsequently be transferred to the substrate material, often by etching.

单词	Electron beam lithography
释义	Electron beam lithography 原声例句 VOA常速英语_科技 So that we are using very highly sophisticated equipment, mainly the electron beam lithography. 我们使用的是非常精密的设备，主要是电子束光刻。英语百科 Electron-beam lithography Electron-beam lithography (often abbreviated as e-beam lithography) is the practice of scanning a focused beam of electrons to draw custom shapes on a surface covered with an electron-sensitive film called a resist ("exposing"). The electron beam changes the solubility of the resist, enabling selective removal of either the exposed or non-exposed regions of the resist by immersing it in a solvent ("developing"). The purpose, as with photolithography, is to create very small structures in the resist that can subsequently be transferred to the substrate material, often by etching.
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Electron beam lithography

Electron-beam lithography