In this paper, a method of Zn in the compound Hg _ ( 1 - x ) Zn _ xTe by AAS is described.

本文提出了一种用原子吸收光度法测定半导体化合物Hg_ ( 1-x ) Zn_xTe中锌的组分数x值的方法.

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The Seebeck coefficient measurement analysis indicated that Bi 2 - xTe 3 + x film have N - type semiconductor characteristic.

温差电性能测试分析表明,Bi_(2-x)Te_( 3+x )薄膜材料具有半导体特性,塞贝克系数不随温度变化.

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