We fabricated tilted buried stripe semiconductor optical amplifier by tensile strained InGaAs bulk active region.
采用张应变InGaAs体材料作为有源区,制作了倾斜的掩埋条形波导结构的半导体光放大器.
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The stable 1.3μ m InGaAsP travelling - wave semiconductor optical Amplifier ( TW - SOA ) module is demonstrated in this paper.
报道一种具有稳定封装结构的1.3μmInGaAsP行波半导体光放大器.
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