It means that the spectrum will decrease with the drain - source voltage.

这意味着干扰频谱幅值随漏源极电压的降低而降低.

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Therefore, Q 1 must withstand a gate - to - source voltage higher than this value.

因此, Q1必须经受门源极电压高于这个值.

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These drain - source voltage waveforms can be theoretically distinguished into typical elements.

这些漏源极电压波形能用典型的理论来描述.

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The hard switching approach ( as shown in Fig. 26 ) doesn't consider the minimum drain - source voltage.

硬开关 ( 图26所示 ) 几乎不考虑漏源极电压的最小值.

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P - channel lateral MOSFET. High power 125 W. Drain - source voltage 250 V. Storage temperature range.

P沟道MOSFET的 外侧. 高功率125瓦特的漏源电压250V.储存温度范围.

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The superposition of all these elements results in a typical drain - source voltage shown in Fig. 16.

把这些原理按时序整合呈现出图16所示的典型漏源极电压.

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This can be explained by two major differences of the 800 V drain - source voltage waveform.

这里有两条理由可以解释800伏特漏源极电压波形的两个差异.

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