The baryon magnetic moments are studied by using a relativistic potential model.

采用相对论性势模型讨论了重子磁矩.

互联网

The tunneling characteristics of the semiconductor quantum well through a double - barrier potential model is studied.

用双势垒模型研究了半导体异质结量子阱的隧穿特性.

互联网

The 2 - D potential model of partial buried oxide VDMOS is obtained in paper.

提出具有部分埋氧结构的功率VDMOS器件的二 维 势模型.

互联网

The global minima of Rgn - N 2 O ( n > 2 ) are found using powell method , with two - body potential model.

首次确定了Rg_n-N_2O ( n>2 ) 的构型.

互联网