Recent advances in heteroepitaxial growth of high quality GaN films by MOCVD and HVPE is reviewed.

介绍了采用MOCVD或HVPE技术高质量异质外延生长GaN薄膜的发展状况.

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High quality GaN film was grown by hydride vapor phase epitaxy ( HVPE ) using porous AAO as mask.

采用均匀的多孔阳极氧化铝做掩膜在氢化物气相外延设备中生长出高质量的氮化镓膜.

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