| 单词 | gate oxide | ||||||||||||||
| 释义 | gate oxide
更多释义 收起释义 例句释义: 闸极氧化层,栅氧化层,氧化栅极 1. and a spacer on a side of the gate oxide layer pattern, the metal nitride layer pattern, and the silicide. 以及在该栅极氧化层图案、该金属氮化层图案和该硅化物的侧面上的间隔物。 ip.com 2. A transistor with a thin gate oxide being driven by too high of a voltage. 一个用薄栅氧化层电晶体被太多的驱动电压高。 bbs.kafan.cn 3. A control gate having a thin gate oxide film is formed over a center channel portion of the channel region. 在沟道区的中央沟道部分上形成具有薄的栅氧化物膜的控制栅。 www.bing.com 4. This voltage creates a field across the gate oxide, which causes the adjacent P substrate to invert to N-type. 这一电压在栅极氧化物层上产生一个电场，它导致毗邻的P型衬底转变成N型。 www.jukuu.com 5. the quality of thin gate oxide plays a very important role in the reliability of devices and circuits. 随着超大规模集成电路的不断发展，薄栅氧化层的质量对器件和电路的可靠性的作用越来越重要。 www.showxiu.com 6. For gate oxide breakdown OTP memory, we present a viable NOR array structure and current sense amplifiers. 针对栅氧化层击穿OTP存储单元提出了可行的阵列结构和电流敏感放大器。 www.fabiao.net 7. Gate polysilicon is deposited over the gate oxide. 以及沉积于所述栅极氧化物之上的栅极多晶硅。 ip.com 8. The deep trench capacitor also includes a layer of gate oxide on the walls and floor. 在所述壁和所述底部上的栅极氧化物层； ip.com 9. the tunnel oxide layer is patterned to form a thin gate oxide. 图案化隧道氧化层，形成栅氧化层。 download.ipexl.com 10. The results seem, found that calcium metal on the gate oxide is very obvious impact. 实验结果看来，发现钙金属对闸极氧化层影响非常明显。 www.cetd.com.tw 1. using the gate oxide layer and the silicon nitride layer as masks to etch the semiconductor substrate and form a shallow channel; 以所述栅氧化层和氮化硅层为掩模刻蚀所述半导体基底，形成浅沟道； ip.com 2. Stress Induced Leakage Current in Different Thickness Ultrathin Gate Oxide MOSFET 不同厚度超薄栅氧化物MOSFET的应力诱导漏电流 www.ilib.com.cn 3. Experimental Research on Breakdown Characteristics of Thin Gate Oxide 薄栅氧化层击穿特性的实验研究 www.ilib.com.cn 4. Wafer Level Reliability Evaluation of Gate Oxide for Advanced CMOS Process 先进CMOS工艺栅极氧化膜的硅片级可靠性评价 www.ilib.cn 5. A Study on Breakdown Characteristics in Fluorinated Ultra-Thin Gate Oxide 含氟超薄栅氧化层的抗击穿特性研究 www.ilib.cn 6. Influence of thickness of gate oxide layer on the irradiation response of CMOS op-amp 栅氧层厚度与CMOS运算放大器电离辐射效应的关系 service.ilib.cn 7. High Temperature and Constant Electric Field TDDB Test of Thin Gate Oxide 高温恒定电场栅氧化层TDDB寿命测试方法研究 www.ilib.cn 8. Soft Breakdown Mechanism and Modeling in Ultra Thin Gate Oxide 超薄栅氧化层中的软击穿的击穿机理和击穿模型 www.ilib.cn 9. A unified percolation model for gate oxide breakdown 栅氧化层击穿的统一逾渗模型 www.ilib.cn 10. a metal nitride layer pattern on the gate oxide layer pattern; 在该栅极氧化层图案上的金属氮化层图案； ip.com 1. A physical-based percolation model for gate oxide TDDB 栅氧化层介质经时击穿的逾渗模型 www.ilib.cn 2. Fabrication of Thin Gate Oxide High-Voltage CMOS 薄栅氧高压CMOS器件研制 www.ilib.cn 3. a pinhole in a transistor's gate oxide 晶体管栅氧的针孔 blog.sina.com.cn 4. a gate oxide layer pattern on the channel; 在该沟道上的栅极氧化层图案； ip.com 5. An oxide layer (51), such as a gate oxide, is then formed on the semiconducting material and overlying the corners; 然后，在半导体材料上形成例如栅极氧化物的氧化物层（51）并覆盖角； ip.com |
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