单词 | gate dielectric | ||||||||||||||
释义 | gate dielectric
更多释义 收起释义 例句释义: 闸极介电层,栅极绝缘层,闸极电介质 1. In an embodiment, the method includes forming a gate dielectric layer on a semiconductor substrate. 实施例中,本方法包括在半导体衬底上形成栅极电介质层。 ip.com 2. drying organic gate dielectric materials, and evaporating and depositing an organic semiconductor layer. 干燥有机栅介质材料,并蒸镀有机半导体层。 ip.com 3. The reliability of strain silicon, gate dielectric and copper interconnection are discussed, and some new researches are presented. 简介了应变硅材料、栅介质的工艺及铜互连的可靠性,并对新的研究方向做了介绍。 www.dictall.com 4. Following, forms dielectric layer on the base board, and the gate dielectric layer covers the gate electrode. 接着,在基板上形成栅介电层,且栅介电层覆盖栅极。 ip.com 5. An interface layer is formed on the gate dielectric layer. 在栅极电介质层上形成界面层。 ip.com 6. The method further includes forming a gate dielectric on a top surface and at least top portions of sidewalls of the fin; 形成一栅极介电体于该鳍片的一上表面及至少该鳍片的侧壁的顶部; ip.com 7. the gate is arranged between the source and the drain and is stacked on the gate dielectric layer; 栅极,位于源极和漏极之间并叠加在所述栅极介电层上方; ip.com 8. baking the organic gate dielectric, and photoetching the graphics of source and drain electrodes on the organic gate dielectric; 烘烤有机栅介质,在有机栅介质上光刻出源漏电极的图形; ip.com 9. coating organic gate dielectric on the gate electrode by contact micro-zone spin coating in a device area; 在器件区域内通过接触式微区旋涂在栅电极上涂敷有机栅介质; ip.com 10. spin-coating soluble organic gate dielectric, filling a channel between source and drain, and planarizing source and drain electrodes; 旋涂可溶性有机栅介质,填隙在源漏之间的沟道,平坦化源漏电极; ip.com 1. Solving Process of Trap Density and Extracting of Correlative Parameters in Thin Gate Dielectric 薄栅介质陷阱密度的求解和相关参数的提取 www.ilib.cn 2. Organic Thin-film Transistor with High Permittivity of Gate Dielectric 双层绝缘层材料的有机薄膜晶体管的制备及其结构性能研究 www.ilib.cn 3. Forming floating grid of gap wall on side wall of dielectric gap wall and gate dielectric layer; 形成一间隙壁浮置栅于该介电间隙壁的一侧壁,且该间隙壁浮置栅位于该栅极介电层之上; ip.com 4. A method of fabricating a gate dielectric layer, including: providing a substrate (100); 一种制造栅极介质层的方法,包括以下步骤:提供衬底(100); www.bing.com 5. DPN process for MOS gate dielectric treatment 绝缘栅氮处理技术 www.ilib.cn |
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