dielectric layer

The circuit board comprises a dielectric layer, a circuit layer and at least one electricity-conducting joint pole and a solder mask.

The circuit layer is contacted with the dielectric layer and is provided at least one gasket joint.

A first interlayer conductive joint hole is formed on and through an interlayer dielectric layer and a dielectric etch stop layer.

The germanium oxide layer and the metal oxide layer are converted into a first dielectric layer.

When an inhomogeneous plane wave is introduced into a dense dielectric layer, it can bounce between the two boundaries.

The dielectric layer comprises a plurality of openings which are formed on the heat dissipation thin layer.

In an embodiment, the method includes forming a gate dielectric layer on a semiconductor substrate.

and flattening the surface of the metal front dielectric layer outside the flat through hole to form the plug structure.

and a third conductive via extending through the second dielectric layer and in contact with the conductive cap.

and a first dielectric layer underlying and adjoining the semiconductor layer.

The net-shaped formation positions of the reinforced metal patterns can prevent the flexible dielectric layer from crinkling or deforming.

Because glass is flatter than ordinary dielectric layer, better emission uniformity can be obtained.

meanwhile the reflective layer is arranged on the first dielectric layer and is positioned above the region without doping.

Tunneling allows voltage to flow from the control gate to the floating gate through the dielectric layer of oxide which separates them.

NTBI induced device degradation can be suppressed by a SiN capping layer between Poly-Si gate and high k dielectric layer.

Then, forms a channel layer on the grating dielectric layer, and the material of the channel layer is shallow impurity non crystal silicon.

The pattern of the dielectric layer and the control grid can be formed on the floating grid orderly.

Carbon nanotube cathodes are formed by screen-printing, and dielectric layer or gate are no longer needed.

the first and second pixel electrodes are arranged on the dielectric layer and connected to the first and second drains, respectively.

The dielectric layer is arranged between the solid state electrolyte layer and the metal layer.

A shield dielectric layer insulates the at lease one conductive shield electrode from the semiconductor region.

As a quasi 2-dimension EM structure, the material and thickness of the dielectric layer also have a great impact on the performance of FSS.

and the alignment marks are arranged on the flexible dielectric layer and positioned in the chip coverage section.

Following, forms dielectric layer on the base board, and the gate dielectric layer covers the gate electrode.

A first dielectric layer covers the common electrodes and the scanning electrodes, and it includes groove shaped field concentration units.

Therefore any electrolytic capacitors within the product will still have a near perfect dielectric layer.

A first electrode layer is deposited over the first dielectric layer.

afterwards, forming a conductor layer on the second dielectric layer extended to second direction.

The dielectric layer electrically insulates the sensor from the combustor surface, which is typically grounded.

The solder mask is configured on the dielectric layer and covers the circuit layer.

The dielectric layer only covers the peripheral surface of the conductive bump or the partial surface of the substrate.

Form the protecting layer to avoid the damage of dielectric layer.

A first dielectric layer covers the pairs of sustain electrodes.

The dielectric layer so formed may be used in the fabrication of MOSFETs (145).

The protection plate (10) is formed within the first dielectric layer (14) using a damascene process.

And the conclusion is presented too. It is easy to design and manufacture waveguide filter using dielectric layer PBG structures.

The transmittance are calculated, which include two kinds of conditions: normal dielectric layer and absorbing dielectric layer.

The second electrode is located on the P type silicon-rich doped dielectric layer.

An interface layer is formed on the gate dielectric layer.

A dielectric layer (18) is formed overlying the sacrificial layer.

The dielectric constant of the second dielectric layer (4) is greater than the dielectric constant of the first dielectric layer (14).

and fluorescent powder is coated on the su*ces of the second dielectric layer (4) and the barrier walls (5).

The fuse element (2) is formed over the second dielectric layer (4).

The second dielectric layer (4) is formed over the protection plate (10) and the first dielectric layer (14).

The protection plate (10) is adapted to shield the first dielectric layer (14) from energy from the laser beam (52).

carrying out a main etching process and etching the partial-thickness dielectric layer at the bottom of the connecting hole pattern;

and a front dielectric layer covering the sustain electrode pairs and having at least two grooves in each of the discharge cells;

Electromagnetic field of a horizontal electric dipole over a perfect conductor coated with a dielectric layer

forming a tungsten seed layer on the surface of the metal front dielectric layer inside the through hole;

The electromagnetic field of a vertical electric dipole over a spherical conductor covered by a dielectric layer

Electromagnetic field of a horizontal electric dipole in a non-perfectconductor coated with a dielectric layer

secondly, providing a dielectric layer with an upper part and a lower part;

fourthly, forming an opening exposing part of the first conductor bore cylinder into the upper part of the dielectric layer;

a grid electrode dielectric layer and a grid electrode layer located above the substrate;

etching a through hole on the dielectric layer until the inner metal layer is exposed in the atmosphere of oxidation;

the gate is arranged between the source and the drain and is stacked on the gate dielectric layer;

itching the plug matter to make it slightly higher then the adhesive layer on the dielectric layer;

a front dielectric layer covering the sustain electrodes and having grooves therein corresponding to each of the discharge cells;

a plurality of gap walls which are formed along the grid electrode dielectric layer and the grid electrode layer;

a capping layer over a side of the isolation layer opposite the first dielectric layer;

a piezoelectric layer provided on the first electrode and disposed to extend to a region on the second dielectric layer;

Analytic solution of the radiation of slot on electrical sphere coated with dielectric layer

wherein the TFT comprises a first semiconductor layer, a grid electrode dielectric layer, a gate electrode layer;

Discharge Characteristics of Protective Film over Dielectric Layer in AC Plasma Display Panels

an interlayer dielectric layer covering the nanometer single crystal silicon layer is formed;

etching the interlaminar dielectric layer and forming a contact hole exposing the substrate;

Effect of dielectric layer surface roughness on the isolation of an RF MEMS switch

forming a photoresist film above the interlayer dielectric layer;

forming a first conductive layer covering the blocking dielectric layer and the first dielectric layer;

Optimized Design of Dielectric Layer PBG Structure in Waveguide Filter

Forming floating grid of gap wall on side wall of dielectric gap wall and gate dielectric layer;

depositing second dielectric layer on the rotary-coated glass layer;

an adhesion promoting dielectric layer on the porous dielectric layer which has a porosity of about 10% or less;

a dielectric layer is formed on a peripheral surface of the conductive bump;

forming dielectric layer of interlayer to cover floating grid of gap wall;

a rear dielectric layer covering the address electrodes;

A multilayered dielectric structure is prepared which has a porous dielectric layer which has a porosity of about 10% or more;

The Study on the Relation Between the Band Gap with Flaw of Photonic Crystals and Inserted Dielectric Layer

a first dielectric layer provided on the substrate to cover the cavity;

forming one dielectric layer and one top cap layer on the conducting plug;

depositing a dielectric layer in the shallow channel;

depositing a seed layer in the cavities and on the dielectric layer;

A method of fabricating a gate dielectric layer, including: providing a substrate (100);