semiconductor device

Also provided is a semiconductor device including a gate structure having a larger width at the top of the gate than the bottom of the gate.

The core of the invention was a semiconductor device made of thin strips of crystalline silicon that boasted a conversion efficiency of 6%.

A memory cell and a data line are controlled with a reset signal, so that data can be reliably outputted in the semiconductor device.

Provided is a semiconductor device equipped with a pull-down circuit capable of reducing its area.

Compressive stress in a film of a semiconductor device may be controlled utilizing one or more techniques, employed alone or in combination.

A semiconductor device may include a semiconductor substrate and a plurality of shallow trench isolation (STI) regions in the substrate.

The invention relates to a manufacture method of a trench type metal-oxide semiconductor device.

The invention provides a semiconductor device having capacitor with upper electrode of conductive oxide and its manufacture method.

The invention provides a semiconductor device and a manufacturing method thereof.

Pertaining to a semiconductor device in which both majority and minority carriers are present.

The utility model relates to a photochemical vapour deposition equipment which is the special equipment produced by a semiconductor device.

Therefore, a semiconductor device including a thin film integrated circuit can be manufactured easily.

The present invention discloses a semiconductor device, a thin film transistor, and a process for forming a TFT.

Sound knowledge in semiconductor physics, semiconductor device testing and characterization.

The transient behavior of a semiconductor device of heat conduction is considered.

Examples for FELV circuits include those that generate an extra low voltage through a semiconductor device or a potentiometer.

Connector, power, semiconductor, device seal and component technology, chip components, other fittings.

A method of manufacturing a semiconductor device includes forming an insulation pattern over a substrate.

a semiconductor device capable of amplification.

Technological Fundamentals of Semiconductor Device?

The invention provides a lead frame and packaging of a semiconductor device.

The Interface between two different semiconductor regions In a semiconductor device.

A semiconductor device may include a semiconductor substrate, one common gate electrode, and one gate insulating layer.

The invention relates to a semiconductor device having a single-ended sensing amplifier.

A semiconductor device is provided as a back-illuminated solid-state imaging device.

The invention can reduce parasitic resistance of the semiconductor device.

Thus, the semiconductor device can enhance current supply capacity regardless of transistor type.

A semiconductor device includes a superlattice that, in turn, includes a plurality of stacked groups of layers.

One aspect of the present invention is a method of forming a semiconductor device having copper metallization.

A process flow integration scheme employs one or more techniques to control stress in a semiconductor device formed thereby.

The semiconductor device can be a DMOS device.

A semiconductor device can't use spin until a way is found to get spin-polarized electrons into it, and that has proved difficult.

Material for insulating film, coating varnish for insulating film, and insulating film and semiconductor device using the same.

An active semiconductor device with three electrodes that may be either an amplifier or a switch.

The semiconductor device further has a trench gate (32) facing a portion of the intermediate region via an insulating layer (33).

Since the rapid development of semiconductor device technique, pipeline technique is used very widely in 32 bit microprocessor.

A method is provided for testing a semiconductor device that includes both a digital (310) and analog (320) portion.

The structure (1) is formed within a semiconductor device (5).

It is a kind of storage device using semiconductor device as storage medium.

The semiconductor device (10) is made over a semiconductor layer (12).

In one embodiment, the semiconductor device includes a static random access memory (SRAM) cell having numerous NFETs (110) and PFETs (112).

Disclosed herein is a semiconductor device, including: a gate electrode formed on a semiconductor substrate through a gate insulating film;

Finite volume element method along characteristics for the transient behavior of a semiconductor device of heat conduction

The semiconductor device includes: an inner insert apparatus (166) used for lapping and loading the semiconductor chips;

One dimension cubic finite volume methods and analysis for the transient behavior of a semiconductor device

Quadratic Finite Volume Element Method for the Transient Behavior of a Semiconductor Device

Implicit-Explicit Multistep Finite Element Methods for A Semiconductor Device With Heat Conduction

The reliability of a semiconductor device is directly affected by its operating temperature

The invention discloses a semiconductor device and method and device for inspecting it. The semiconductor device comprises: circuit board;

The invention provides a semiconductor device, comprising a first readout amplifier coupled to an input for generating a first output;

Implementation of Genetic Algorithm in Semiconductor Device Parameter Extraction System

A semiconductor device comprises an active region formed in a semiconductor substrate;

Improved Genetic Algorithm for Semiconductor Device Comprehensive System

SUBSTRATE PROCESSING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

Moving grid finite element method along characteristics for semiconductor device of heat conduction

A semiconductor device includes first layer wiring including a gate electrode mounted on a substrate;

Precondition Methods for Solving Linear Systems in Semiconductor Device Simulation

Semiconductor Device Synthesis with Parallel Genetic Algorithm

Optimization of Anti-Radiation Shield on Semiconductor Device under Electron Radiation in Space

Radiation Effect and Reinforce of Radiation Resistance for Semiconductor Device

LED semiconductor device (semiconductor) diode light-emitting diode

General specification for semiconductor device curve tracers

Process Control for the Reliability of Discrete Semiconductor Device

High voltage planar discrete semiconductor device with single field limiting rings

Application of CGS Algorithm for Semiconductor Device Simulation

Method of Application of Combining ADI and the High-order Compact Finite Difference to Semiconductor Device Simulation

Measurement Of Semiconductor Device Technics

Influence of Surface Charge on the Passivation of Beveled Semiconductor Device

Effective Methods for the Improvementof Semiconductor Device Yields

Relation Between Yield and Reliability of Semiconductor Device

Application of ICP Etching in the Fabrication of Compound Semiconductor Device

Rapid Evaluation Method of Activation Energy for Semiconductor Device

A Method of Verifying Simulated Steady Thermal Field of a Semiconductor Device

Upwind Finite Volume Scheme for Semiconductor Device in Three Dimension

Process for fabricating thin film semiconductor device

The Evaluation of Reliability of Semiconductor Device

Design Technology of Semiconductor device

Simulation of Semiconductor Device and Process

pn junction is the most important building block to go into action in a semiconductor device pn

Study on the Sensitive Semiconductor Device of Sulfate Radical Ion

Test methods for semiconductor device curve tracers

Fuse for the protection of semiconductor device

Application of pattern recognition in enclapse of semiconductor device

A Nonparabolic Hydrodynamic Model for Semiconductor Device

Semiconductor Device Model Parameter Extraction Based on Genetic Algorithm

A semiconductor device includes a channel region;

Fuse for protection of semiconductor device

Heat sink for power semiconductor device

Development of semiconductor device and research of solid nanoelectron device

The development of power semiconductor device

The Development of Wide Band Gap Semiconductor device