polysilicon

Of course, this heavy lifting on the production side would be meaningless if the quality of the granular polysilicon were not up to snuff.

Directional solidification process is an important part that of the physical metallurgy of solar energy polysilicon.

The ban comes at a time when Chinese polysilicon companies are ramping up production, despite an oversupply of the key solar component.

But it's leading manufacturer, China's Suntech sources half its polysilicon from outside China, and 30% of that comes from the US.

Back to the technical track, Reis broke down the list of usual quality consideration suspects when it comes to polysilicon.

Reduction process is to determine the maturity of the polysilicon production and product quality of the core.

This was a response to tumbling prices of solar panels, triggered largely by a big increase in polysilicon production capacity.

A transistor may be formed with a first polysilicon layer covered by a dielectric.

With the traditional large polysilicon solar cells compared to its better quality cheaper.

Polysilicon prices soared, hitting $450 a kilogram in 2008, up tenfold in a year.

A polycide layer is defined over the impurity doped polysilicon layer. The polycide layer and the polysilicon layer function as a word line.

The invention relates to a method for preparing trichlorosilane from tetrachlorosilane, belonging to the field of polysilicon production.

A second polysilicon layer is formed over the substrate such that the second polysilicon layer fills the recess.

The polysilicon can enhance oxygen precipitation nucleating and growing, acting as the intrinsic gettering.

OCI has increased significantly production capacity, which fully demonstrated its commitment to capture polysilicon market.

The intention of the polysilicon tiles is to reduce erosion of the field oxide between closely spaced active regions.

Then, a first polysilicon layer is formed over the substrates such that the first polysilicon layer fills the opening.

Produce the main method of polysilicon at home and abroad, and do a synopsis description to improvement Siemens method.

The present invention discloses one kind of polysilicon film crystallization quality detecting device and detection and control method.

An upper portion of the first polysilicon layer is removed such that void expands to a recess and the recess is exposed.

Double-polysilicon RCA transistors, with both less temperature dependence on current gain and higher cut-off frequency, are fabricated.

Overcapacity in polysilicon and finished panels, and low-cost Chinese production, are responsible for the decline.

That continuous nature helps lower the cost of the polysilicon coming out.

Typically used in the transistor element called the gate, polysilicon has been part of the standard chip-manufacturing process for decades.

The novel structure consists of two interdigitated combs containing 21 aluminum fingers and 60 polysilicon fingers which act as the heater.

light beam is split with one light splitter one first light beam and one second light beam for illuminating the first polysilicon areas.

That changed this year when solar-panel prices fell as dozens of new Chinese polysilicon-makers started operating.

An oxide layer is then deposited on the first polysilicon layer through a CVD process to fill the trench.

This paper presents a novel structure for in situ determining thermal expansion coefficient of polysilicon thin films.

The semiconductor industry is at present the biggest user of polysilicon, which is refined from rock and sand.

In recent years, solar power growth has been strangled by established polysilicon makers' unwillingness to expand capacity rapidly.

An impurity doped polysilicon layer is defined over the two insulator regions and the anti-fuse.

Reduction of polysilicon production a number of ways: silane law, improved law and Siemens Siemens law.

Photoetching polysilicon forms force sensitive resistance bar.

The warning comes despite recent capacity expansion announcements at the world's largest polysilicon producers.

Other top five sectors are cement, plate glass, coal chemical industry, polysilicon and wind power equipment.

The electrical method is proposed to measure the fracture strength of polysilicon, so the measurement is simple.

Prices for polycrystalline silicon, or polysilicon, have increased rapidly to $450 per kg last summer thanks to their generous subsidies.

With the rise of solar energy technology, polysilicon supply tight and prices rose.

Beijing's response was swift: development of domestic polysilicon supplies was declared a national priority.

The layout was designed with L-EDIT and the wafers were fabricated with double-polysilicon, N well CMOS process.

Any synergies between coal-fired plants and those producing polysilicon are few.

The invention also provides a continuous producing method of polysilicon.

Gate polysilicon is deposited over the gate oxide.

Polysilicon moved from shortage to glut in almost the time it takes to flick a light switch.

In the West, polysilicon plants take years to build, requiring lengthy approvals.

The polysilicon tiles are made from the same layer of polysilicon as the gate and they are formed simultaneously with the gates.

Wind firms' worries echo those in the solar-power business, which is also booming but where a shortage of polysilicon has hampered growth.

The polysilicon industry in China is in rapid growth and polysilicon plant engineering market is in the ascendant.

Silicon is made from sand, which is abundant, but there are not enough refineries to turn it into solar-grade polysilicon.

Since then, polysilicon prices have plummeted to about $55 a kilogram.

The first polysilicon layer also includes a void therein.

"This is positive for China's polysilicon sector, and the environment, " said GCL-Poly president Hunter Jiang.

Contact between the gate metal and the polysilicon is normally made in a gate metal region that is outside the active region of the device.

Other silicide layers (50. 4-50. 6) are on the tops of the source, drain and polysilicon gate.

At the corner of the gate polysilicon (14. 3) and the polysilicon tiles (14. 1 and 14. 2) are oxide spacers (60. 1-60. 6).

On the upper surface of the LOCOS regions (12. 1, 12. 2) are polysilicon tiles (14. 1, 14. 2), respectively.

Determination of the Number of Grains, the Average Length of Grain and the Activation Energy in Polysilicon Resistor

The polysilicon tiles (14. 1, 14. 2) have silicide layers (50. 1, 50. 2).

Thermal damage will produce polysilicon or amorphous silicon on the surface of the silicon;

Mechanical properties of polysilicon microcantilever beams measured using nanoindentation

Resistivity Instability in Polysilicon Resistors Under Metal Interco-nnects and Its Suppression by Compensating Ion Implantation

Optimization for polysilicon fabrication process parameters by orthogonal experiment

A Study of DC Characteristics of Transistors with Polysilicon Emitters

A Study on the Temperature Coefficient of Sensitivity Self-compensation Technology of Polysilicon Pressure Sensor

Design and fabrication of CMOS-compatible polysilicon diaphragms for pressure sensor applications

On-Chip Temperature Compensation Technology of High-Temperature Polysilicon Pressure Sensor

Fracture Reliability Prediction Model for Polysilicon Micro-cantilevers

Compensation technology of thermal sensitivity shift of polysilicon pressure sensor

Preparation and Characterization of Polysilicon Acid Sulfate Coagulant

Young's Modulus of Polysilicon Microcantilever Beams by Deflection Using Nanoindentation

Simulation of Static-Characteristics of Lightly-doped-drain Polysilicon Thin Film Transistors

Technology Design and Computer Simulationof Polysilicon Emitter Bipolar Transistors

Research of the Performance of the Submicrometer Double Polysilicon Self-aligned Bipolar Transistors

Influence of Annealing Conditions on Optical and Electric Properties of Polysilicon Thin Films

Super High Speed Polysilicon Emitter Integrated Circuit Technology

An On-chip Temperature Compensation Technology of Polysilicon Pressure sensor

Application progress on the preparation of low temperature polysilicon films

Measurement System for In Situ Extracting Material Parameters of Polysilicon Film

Electrical Measurement of Fracture Strength of Polysilicon

The Research Progress of Rectifying Polysilicon Acid Flocculants

Design and Simulation of On-Line Test Structure for Thermal Conductivity of Polysilicon Thin Films

Research on the Fatigue Damage of a Polysilicon Beam

Optimum Design of Polysilicon Thin Film Transistor Liquid Crystal Displays

Preparation and Performance of Water-based Nanometer Polysilicon as Augmented Injection for Oil Field

A Novel Surface-Micromachined Structure For On-Line Measuring Thermal Expansion Coefficient of Polysilicon Thin Films

On-line Testing for Temperature Coefficient of Resistance of Surface-Micromachined Polysilicon Thin Films

Application of Nanometer Polysilicon in Oil Field Development

Process conditions of preparing polysilicon ferricsulfate from pyrite cinder

A Novel Inverse Crystal Growth Model of Porous Polysilicon Formation Process

Piezoresistive Effect of Polysilicon Films at High Temperature

Test structure to measure the thermal diffusivity of polysilicon films

On-line Extracting the Thermal Diffusivity of Surface-micromachined Polysilicon Thin Films

On-Line Extraction for Thermal Diffusivity of Surface-Micromachined Polysilicon Thin Films

Simulation and Design of Capacitive Microacoustic Sensors with Polysilicon Film

advanced polysilicon self aligned process

An analytical model of quantum effect in MOS inversion layer and polysilicon

Dopant dependent grain size evolution in polysilicon

Test Structure to Measure the Diffusivity of Polysilicon Thin Films

Dopant diffusion in polysilicon with dependence on grain size

An out-chip method for measuring fatigue property of polysilicon thin film

the etch of polysilicon emitter bipolar technology

Study on in-situ measurement of residual stress of polysilicon thin film

the polysilicon layer is patterned to form a control grid;

Influence of Doping Level on the Gauge Factor of Polysilicon Nano-Film

CMOS compatible thermal anemometer based on laterally polysilicon diodes

Solar cell and production of polysilicon

Polysilicon technology Research units in China (according to the industry classification, it groups to metallurgy sector):