plasma source

In plasma source ion implantation process, the sheath evolution has a very important influence on the surface modification of materials.

This method would be very helpful to the design of practical plasma source ion implantation processes.

The lab-built plasma polishing setup consists of a vacuum chamber, a plasma source, a RF power supply and gas paths.

The silicon thin films on glass substrate were prepared using microwave ECR plasma source enhanced magnetron sputtering.

The results show that the ECR plasma source may generate stable, high density plasma with low electron temperature.

It was studied that metallic material surface was modified by use of the new technique for ion injection with plasma source.

Optical thin film properties deposited using the adapted high ion current plasma source are likewise described.

combined with inductive coupled plasma source , ms can determine if water is polluted by elements like as or pb.

In this paper, we fulfill this aim by using an ECR plasma source to create the plasma.

A low-power microwave plasma source based on microstrip split-ring resonator at 2.

A New Plasma Source and Its Application in the Surface Modification of Fabric Materials

Study of hard diamond-like carbon films deposited in an inductively coupled plasma source

Atmospheric pressure non-thermal plasma source and its application in textile processing

Effect of the auxiliary electrode radius in a vacant circular pipe on ion dose in plasma source ion implantation

Preparation and characterization of DLC films by microwave ECR plasma source enhanced unbalance magnetron sputtering

Incorporation of an Electro-Optic Ion Detector into an Improved Plasma-Source Mass Spectrograph

Characteristics of an electron cyclotron resonance plasma source

Structure and properties of ZrN films prepared by ECR-microwave plasma source enhanced sputtering under different bias voltages

Influence of the plasma source parameters on the performances of long-conduction-time plasma opening switch

Etching Techniques by an ECR Plasma Source

Langmuir Probe Diagnosis of an Electron Cyclotron Resonance Plasma Source

Preparation of Silicon Thin Films on Glass Surface Using Microwave ECR Plasma Source Enhanced Magnetron Sputtering

The Microwave Plasma Source Used in Large Area Material Modification

the results were summarized as follows : ( 1 ) diamond - like carbon films could be fabricated by plasma source ion implantation ;

TiN coating for inner surface modification by grid enhanced plasma source ion implantation

Plasma Source Ion Implantation Surface Modification of Titanium Alloy

Discharge Characteristics of Slot Antenna Plasma Source in Broad Pressure Range

Study and Application on Surface Modification by Plasma Source Ion Implantation

Assessment of Interferences in Cu Isotope Ratio Measurements Using Multiple-Collector Inductively Coupled Plasma Source Mass Spectrometry

Preparation of Diamond-like Carbon Films by Plasma Source Ion Implantation

Adjustment and Application of Pulsed Cathodic Arc Metal Plasma Source

Soft X-ray reflectometer based on laser-produced plasma source with a gas-jet target

Filtered Cathodic Arc Plasma Source and Thin Film Deposition

Modeling of planar spiral inductively-coupled microwave plasma source

Technical Measures of Reducing Macropaticles in the Cathodic Arc Metal Plasma Source

Soft X-Ray Reflectometer with Laser Produced Plasma Source

The Design of Space Plasma Source and Measurement System

A new atmospheric RF cold plasma source with microhollow cathode structure

thirdly, dissociating the plasma source under the normal pressure to form plasma;

Effect of Plasma Source in Starter Pig Diet Centers

In this paper, a helicon plasma source has been introduced the first time in China;