nitride layer

The invention provides a resistivity switching metal oxide or nitride layer capable of reaching at least two stable resistivity states.

An oxide layer may be between the silicon nitride layer and the surface of the silicon carbide layer.

and a spacer on a side of the gate oxide layer pattern, the metal nitride layer pattern, and the silicide.

and finally changing the air pressure of a growth chamber to grow a gallium nitride layer.

It manifests that the compound layercomprises of chromium nitride layer on the top, inner nitride diffusion layer, and interior substrate.

The other substrate is curved by the presence of a silicon nitride layer.

A method for forming a compressive stress carbon-doped silicon nitride layer is provided.

Wherein, the silicon oxide layer and the silicon nitride layer can form an insulation layer.

A silicon nitride layer (56) is on the silicon carbide layer, and an organic protective layer (66) is on the silicon nitride layer.

and removing the silicon nitride layer.

Numerical Prediction to Heat-Treatment-Induced Surface Deformation of Titanium Alloy Thin Wall Workpiece Coated with Nitride Layer

using the gate oxide layer and the silicon nitride layer as masks to etch the semiconductor substrate and form a shallow channel;

Microstructure Analysis of Powder Sintering Nitride Layer

a metal nitride layer pattern on the gate oxide layer pattern;

a silicide on the metal nitride layer pattern;