| 单词 | LDMOS | ||||||||||||
| 释义 | LDMOS
更多释义 收起释义 例句释义: 横向扩散金属氧化硅 1. The invention provides an LDMOS device capable of improving breakdown voltage and a manufacturing method thereof. 本发明提供了一种可提高击穿电压的LDMOS器件及其制造方法。 ip.com 2. This model is an aid to understand the device physics during on-state accurately and it also directs high voltage LDMOS design. 该模型有助于深入理解LDMOS开态击穿的物理过程，可用于指导高压LDMOS的设计。 www.ceps.com.tw 3. The relation between the maximum temperature and the switching condition of an LDMOST under different frequencies is studied. 研究了LDMOS器件内部的最高温度与开关频率之间的关系。 www.ceps.com.tw 4. The compatibility of BCD process integration was discussed. We focused on the principle and concerns on LDMOS technology. 对BCD工艺兼容性进行了说明，着重阐述了LDMOS的工艺原理和关键工艺设计考虑。 dictsearch.appspot.com 5. The methods for every resistance are given out in details according to the structure of LDMOS. 根据LDMOS的结构特点分别给出了各个电阻的具体计算方法。 www.ceps.com.tw 6. The process for this new structure is compatible with the normal P type LDMOS. 根据以上结构制定新工艺，该工艺与常规P型LDMOS兼容。 www.fabiao.net 7. An accurate expression of LDMOS on-resistance is obtained in the end. 最后给出了精确的LDMOS导通电阻表达式。 www.ceps.com.tw 8. Design and Implementation of a High-Voltage LDMOS Operational Amplifier 一种LDMOS高压运算放大器的设计与实现 www.ilib.cn 9. An Analytical Model of a LDMOS On-Resistance Using a Well as a High Resistance Drift Region 用阱作高阻漂移区的LDMOS导通电阻的解析模型 service.ilib.cn 10. Influence of Gate Voltages on Temperature of LDMOS Under Ultra-High Transient Currents 栅压对LDMOS在瞬态大电流下工作的温度影响 www.cjs.ac.cn 1. Research of Breakdown Structure in SOI LDMOS Transistors 晶体管耐压结构的研究 scholar.ilib.cn 2. Effects of Gate Voltages on Temperature of LDMOS at High Current 栅压对LDMOS在异常大电流下工作的影响 www.ilib.cn |
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