grid electrode

The high-efficiency cell was the result of a conductor grid electrode formed using a wet-chemical plating technique.

The symmetrical light adulteration areas between the heavy adulteration area and the trench area are self-aligned with the grid electrode.

and carrying out an ion implantation operation with the patterned resist etchant layer and the grid electrode as a mask.

and forming self-aligned metal silicides on the surfaces of the grid electrode, the source electrode and the drain electrode.

synchronized trigger circuit of paralleling grid electrode with high-power pulse is designed.

The operational amplifier outputs a voltage for controlling grid electrode based on the said linear voltage and an input voltage.

The grid electrode driving circuit is used to drive correspondent grid electrode when data electrode is driven.

In one embodiment, the grid electrode region is formed by a patternized amorphous silicon layer.

In addition, a method for manufacturing the lower grid electrode-based film transistor is disclosed therein.

a grid electrode dielectric layer and a grid electrode layer located above the substrate;

cleaning the semiconductor substrate, on which the grid electrode is formed;

a plurality of gap walls which are formed along the grid electrode dielectric layer and the grid electrode layer;

A method for forming a lightly doped region comprises the following steps: forming a grid electrode on a semiconductor substrate;

wherein the TFT comprises a first semiconductor layer, a grid electrode dielectric layer, a gate electrode layer;

Single grid electrode plate quantity