For suppressing the radiation-induced threshold shifts, controlling oxide charges and interface states, fluorine introduction after polysilicon doposition is a better implantation technology.
结果发现，多晶硅面注F具有较强的抑制辐射感生阈电压漂移，控制氧化物电荷和界面态生长的能力。
2
An activated aluminum oxide processed under a specific way was used as fluorine-removal agent for the treatment of fluorine-contained water.