The ferroelectricmemory devices utilizing the property of polarization reverse, nonlinear optic devices and electron optic devices had been applied in some case.
利用极化反转特性的铁电存贮器件以及非线性光学效应和电光效应已部分得到应用。
2
Due to the advantage of non-destruction read out, Ferroelectric Field Effect Transistor (FFET) is supposed to be the ideal potential memory device and has been widely investigated.
Because of its fast rates and memory effects, ferroelectric liquid crystal as second generation liquid crystal has held the interest of chemical, physical and electronic workers in various countries.