This paper discussed an analytical method for determining the heterojunction bipolar transistors (HBTs) equivalent circuit model.
提出一种求解异质结双极晶体管(HBT)小信号等效电路模型的解析方法。
2
In this paper, a new lumped elements latchup model consisting of four bipolar transistors is used to analyze the latchup effect of CMOS inverters in transient radiation environment.