The structure of a vertical multiple-gate MOSFET based on bipolar technology is presented.
提出了一种基于双极工艺的纵向多面栅MOSFET的结构和工艺。
2
The paper expounds MOS system power element's characters, insulated gatebipolar transistor and integration type power element's technology and its applications.
本文阐述了MOS系列功率器件的特性、绝缘栅双极型晶体管和集成型功率器件技术，以及它们的应用。
3
The system adopted insulated gatebipolar transistor (IGBT) as its main circuit and pulse-width modulating (PWM) technology.