A new device structure of silicon bipolar microwave power transistors with so called tree overlay geometry polysilicon emitter has been designed.
设计了一种称之为多晶硅覆盖树技状结构的双极型微波功率晶体管。
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Each device has an eight-bit CMOS shift register and CMOS control circuitry, eight CMOS data latches, and eight bipolar current-sinking Darlington output drivers.