Its dual UVLO feature protects the power MOSFET from damage in the event that the gate-drive or supply voltage is too low.
器件的双uvlo功能保护功率MOSFET不会因栅极驱动或电源电压过低而损坏。
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This paper goes into the application of the GaAs Dual-Gate FET to the high frequency tuning-amplification and frequency conversion in a TV UHF channel selector and gives some experimental results.
This paper reports the design and experiments of the low noise UHF electronic tuner consisting of a low noise dual-gate FET and a high merit silicon epitaxial varactor.