The average flux-flowresistivity depending on the average current density and temperature is also calculated with above distributions.
应用二维场量分布进一步得到了平均磁流阻率随电流密度和温度的变化特性。
2
In this article, we have been designed a kind of electrode change device for distributed high density resistivity instrument and provided its theory and work flow and its circuit diagram.
Moreover, high density impurities might be formed in the ZnO lattice as NH_3 flow rate increased further, which could induce degradation of crystal quality causing the increase in the resistivity.