Three solutions of optimization of experimental parameters, adding beam mask and using etching technologies for improving atom lithography quality are presented.
提出了优化实验参数、增加束掩模和利用刻蚀技术三种改善原子光刻实验的方法。
2
Photoresist grating was fabricated by holography, and it was used in the mask of ion etching.
采用全息法制备了光刻胶光栅,并用该光栅掩膜离子蚀刻。
3
Then, a micro exhaust duct was etched on an electroforming deposit through masketching technology.